| PART |
Description |
Maker |
| 2SK2885 2SK2882 |
SILICON N-CHANNEL MOS TYPE
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)
|
Toshiba Semiconductor
|
| HN1L02FU E001983 |
N CHANNEL MOS TYPE/ P CHANNEL MOS TYPE (HIGH SPEED SWITCHING/ ANALOG SWITCH APPLICATIONS)
N CHANNEL MOS TYPE, P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| AQY210EH AQY210EHA AQY214EHA AQY214EHAZ AQY210EHAX |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA.
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA.
GU (General Use)-E Type 1-Channel (Form A) 4-pin Type
|
Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
|
| HN3G01J HN3G01 E002017 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
From old datasheet system
|
http://
Toshiba Semiconductor
|
| SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2038 K2038 |
2SK2038
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR
From old datasheet system
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型（高速，高电流开关应用）
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| AQW454 AQW454AZ AQW454A AQW454AX |
PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface mount terminal. Picked from the 5/6/7/8-pin side.
PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface mount terminal. Picked from the 1/2/3/4-pin side.
PhotoMOS relay, HE (high-function economy) [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal.
HE (High-function Economy) Type [2-Channel (Form B) Type] 他（高功能经济）类型[2通道（表B）型]
|
Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
Panasonic, Corp.
|
